半導体レーザの製造方法
文献类型：专利
| 作者 | 別所 靖之; 米田 幸司; 吉年 慶一; 山口 隆夫 |
| 发表日期 | 1998-07-17 |
| 专利号 | JP2804533B2 |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To contrive improvement in yield and reproducibility by a method wherein a block layer is grown on a flat substrate and a ridge which is narrow in the vicinity of the end plane and is wide in the central part is formed on the block layer, after which a groove which is not reaching the substrate in the vicinity of the end plane and is reaching that in the central part is formed in the center of the ridge. CONSTITUTION:On a P-GaAs substrate 1, an N-GaAs block layer 2 of 2mum thick is formed by an LPE method. On this block layer 2, a ridge 11 whose width is narrow in the vicinity of the end plane and is wide in the central part is formed by etching. Then, a groove 12 which is not reaching the substrate 1 in the vicinity of the end plane and is reaching that in the central part is formed approximately in the center of the ridge by etching. Finally, on the wafer which has been subjected to the above mentioned treatments, a P-Ga0.55Al0.45As clad layer 3, a Ga0.9Al0.1As active layer 4, an N-Ga0.55Al0.45As clad layer 5, and an N-GaAs contact layer 6 are grown in this order. Namely, the block layer 2 is grown on the flat substrate 1, so that a process for growing the layer on a stepped part is effected only once as a second growth. Accordingly, the improvement in yield can be contrived and the reproducibility of the fabricated semiconductor laser is enhanced. |
| 公开日期 | 1998-09-30 |
| 申请日期 | 1989-08-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84292]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | 別所 靖之,米田 幸司,吉年 慶一,等. 半導体レーザの製造方法. JP2804533B2. 1998-07-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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