Semiconductor laser device
文献类型：专利
| 作者 | YAMASHITA KOJI; MORI MASATAKA |
| 发表日期 | 1990-04-17 |
| 专利号 | JP1990103988A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enhance converting efficiency to a second higher harmonic wave and to output only the second higher harmonic wave by providing a coating film at the rear end surface of a cylindrical SHG element in a semiconductor laser device wherein the second-higher-harmonic-wave generating element is provided. CONSTITUTION:Laser light having a wavelength lambda1 which is inputted through a front end surface 1 passes through a cylindrical second-higher-harmonic-wave generating SHG element 3 and reaches a rear end surface 2. A transmitted fundamental wave lambda1 is reflected from a coated film 4. Only the higher harmonic wave having a lambda1/2 wavelength is emitted. In this way, an infrared laser beam can be converted into a visible light laser beam and the visible light laser beam can be converted into an ultraviolet-ray laser beam at high efficiency. |
| 公开日期 | 1990-04-17 |
| 申请日期 | 1988-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84294]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YAMASHITA KOJI,MORI MASATAKA. Semiconductor laser device. JP1990103988A. 1990-04-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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