Method of producing a semiconductor laser
文献类型：专利
| 作者 | TAKAMI, AKIHIRO MITSUBISHI DENKI |
| 发表日期 | 1991-12-27 |
| 专利号 | EP0306225B1 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of producing a semiconductor laser |
| 英文摘要 | A method of producing a semiconductor laser comprises a process of producing at least a support layer (8) and a mask layer (9); a process of producing an overhung portion (11) of mask layer (9) by etching these layers and side-etching the support layer (8) at above the semiconductor substrate (1) at the neighborhood of the resonator end surface; and a process of growing a lower cladding layer (4,4a), an active layer (5,5a), and an upper cladding layer (6,6a) successively on the substrate (1) by an MOCVD method; whereby a doublehetero junction structure in which the thicknesses of the respective layers at the neighborhood of the light emission end surface are less than those at the inside and central portion of the chip is obtained. |
| 公开日期 | 1991-12-27 |
| 申请日期 | 1988-08-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84297]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TAKAMI, AKIHIRO MITSUBISHI DENKI. Method of producing a semiconductor laser. EP0306225B1. 1991-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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