Semiconductor device
文献类型：专利
| 作者 | IMAMOTO HIROSHI; SATO FUMIHIKO |
| 发表日期 | 1991-04-10 |
| 专利号 | JP1991085784A |
| 著作权人 | OMRON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To improve flatness of the main functional part of a semiconductor device and avoid mixture of an impurity by providing a short cycle super lattice layer which is manufactured by the MEE method at the buffer part for the main functional part. CONSTITUTION:A wafer is formed by enabling a buffer layer 2, a super lattice buffer layer 3, a first clad layer 4, a short cycle super lattice layer 5, a second clad layer 6, an activation layer 7, a third clad layer 8, and a cap layer 9 to be grown on a substrate 1 in sequence by the molecular beam epitaxy(MBE). After this, electrodes are formed above and below it. In the short cycle super lattice layer 5, a GaAs layer 51 and an AlGaAs layer 52 consisting of 2 to 5 molecular layers are laminated alternately. The short cycle super lattice layer 5 is formed by the MEE(Migration - Enhanced Epitaxy) method. In the process for forming this short cycle super lattice layer, the motion of III family element becomes active while there are no V family elements and a surface diffusion distance becomes longer, thus obtaining a crystal which is superb in flatness. |
| 公开日期 | 1991-04-10 |
| 申请日期 | 1989-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84299]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON CORP |
| 推荐引用方式 GB/T 7714 | IMAMOTO HIROSHI,SATO FUMIHIKO. Semiconductor device. JP1991085784A. 1991-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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