Optically bistable semiconductor laser
文献类型：专利
| 作者 | SANADA TATSUYUKI; YAMAGOSHI SHIGENOBU |
| 发表日期 | 1989-08-30 |
| 专利号 | JP1989216587A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optically bistable semiconductor laser |
| 英文摘要 | PURPOSE:To control the value of a resistor between first and second electrodes of upside and to operate ON, OFF of a semiconductor laser by forming a window for exposing a first conductivity type clad layer between the first and second electrodes, forming a second conductivity type impurity diffused region on the exposed clad layer, and providing a third electrode connected to an impurity diffused region. CONSTITUTION:A window 32 to expose an N-type InP upper clad layer 24 by removal of part of an N-type InGaAsP contact layer 25 is formed between first and second electrodes 29 and 30. A P-type impurity diffused region 33 is formed on exposed the layer 24. A third electrode 34 extending on an SiO2 insulating layer 28 is formed on the region 33. A positive or negative potential with respect to a semiconductor substrate 21 as a reference potential is applied to the electrode 34, thereby applying a reverse bias to the P-N junction of the clad layer and the impurity diffused region. Thus, a depleted layer is extended into the layer 24. As a result, a resistance between the first and second electrodes 29 and 30 can be enhanced. Thus, the resistance between the electrodes can be controlled by a bias potential to the electrode 34. |
| 公开日期 | 1989-08-30 |
| 申请日期 | 1988-02-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84300]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SANADA TATSUYUKI,YAMAGOSHI SHIGENOBU. Optically bistable semiconductor laser. JP1989216587A. 1989-08-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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