Semiconductor laser element
文献类型：专利
| 作者 | YAMASHITA SHIGEO; KAYANE NAOKI; KAJIMURA TAKASHI; OOUCHI HIROBUMI |
| 发表日期 | 1983-11-15 |
| 专利号 | JP1983196086A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To facilitate the manufacture and improve the reproducibility by a method wherein impurity diffusion using a narrow aperture is performed and thus the shape of a diffusion front is formed in an arc shape. CONSTITUTION:An N type clad layer 2, an N type, P type or undoped active layer 3, a P type clad layer 4, and an N type current stricture layer 5 are formed on an N type semiconductor substrate Next, using a mask of impurity diffusion provided with the narrow aperture of width less than 2.5mum, a P type impurity is diffused until it reaches the P type clad layer so that the shape of the diffusion front of the impurity diffused region 7 becomes in a form close to an arc. The semiconductor laser having such a narrow distribution of gain is oscillated to the axial direction by multi-modes, and oscillated stably also to the deformation of the distribution of carriers due to induction emission, and therefore bending, etc. doesnot generate in the characteristic of current-photooutput. |
| 公开日期 | 1983-11-15 |
| 申请日期 | 1982-05-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84301]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | YAMASHITA SHIGEO,KAYANE NAOKI,KAJIMURA TAKASHI,et al. Semiconductor laser element. JP1983196086A. 1983-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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