埋め込み型半導体レーザおよびその製造方法
文献类型：专利
| 作者 | 井上 武史 |
| 发表日期 | 1998-01-16 |
| 专利号 | JP2736383B2 |
| 著作权人 | 光計測技術開発株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 埋め込み型半導体レーザおよびその製造方法 |
| 英文摘要 | PURPOSE:To form a narrow active layer accurately through relatively simple manufacturing process by limiting the active layer grow area through utilization of crystal faces. CONSTITUTION:A layer structure including a current block layer is crystally grown on a (100) GaAs substrate. Then the current block layer in the layer structure is etched to form a stripe groove along (110) direction and an active layer is crystally grown in the groove. Thereafter, clad layers or guide layers are crystally grown at the inside and the outside of the groove so that a (111) B face passing through the upper end section of the groove is formed, and an active layer is crystally grown under a condition where crystal growth on the (111) B face has stopped. In other words, when a groove is formed along (110) direction in the layer structure on the (100) GaAs substrate 1 and the angle gamma at the upper end of the groove is set smaller than 125 deg. (111) B face passing through the upper end of the groove is formed by selecting the growth conditions. When the face is formed, crystal growth on that face stops until the layer grown from the bottom of the groove reaches to that position. Even if active layers 6, 6' are grown on the entire face under this state, the active layers 6, 6' are cut at the inside and the outside of the groove by means of the (111) B face. By such arrangement, a narrow active area can be formed without requiring a mask. |
| 公开日期 | 1998-04-02 |
| 申请日期 | 1988-11-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84303]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 光計測技術開発株式会社 |
| 推荐引用方式 GB/T 7714 | 井上 武史. 埋め込み型半導体レーザおよびその製造方法. JP2736383B2. 1998-01-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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