Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | SHINOZAKI KEISUKE; WATANABE AKIRA; KAWAHARA MASATO; WATANABE NOZOMI |
| 发表日期 | 1987-02-28 |
| 专利号 | JP1987047183A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To readily manufacture a semiconductor laser element having low noise and small astigmatism in a high yield by forming in space etching grooves which arrive at a lower side clad layer from a cap layer at the end of an element having a resonance surface, and forming an oscillation region between the grooves. CONSTITUTION:A laminate which contains an N-type AlGaAs layer 23 as a lowside clad layer, a P-type GaAs layer 25 as an active layer, a P-type AlGaAs layer 27 as an upside clad layer, and an N-type GaAs layer 29 as a cap layer is formed by an epitaxially growing method on an N-type GaAs substrate 2 Zn is diffused in a stripe shape in a direction perpendicularly crossing the resonance surface from the layer 29 to the layer 27 in the desired region of a wafer to form a diffused region 3 An etching groove 39 which arrives at the layer 23 is formed in a region 43 to be cleaved. Further, a P-type side electrode is formed on the layer 29, and an N-type side electrode is formed under the substrate 2 The region 43 is cleaved to form a resonance surface 35, thereby obtaining a semiconductor laser element. |
| 公开日期 | 1987-02-28 |
| 申请日期 | 1985-08-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84307]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SHINOZAKI KEISUKE,WATANABE AKIRA,KAWAHARA MASATO,et al. Semiconductor laser element and manufacture thereof. JP1987047183A. 1987-02-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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