Semiconductor laser device
文献类型：专利
| 作者 | FUJIMOTO, TSUYOSHI |
| 发表日期 | 2010-08-17 |
| 专利号 | US7778298 |
| 著作权人 | OPTOENERGY, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | An object of the invention is to achieve a high output gain waveguide semiconductor laser device exhibiting high reliability by suppressing growth of <100>DLD. A semiconductor laser device includes a semiconductor laser structure of a gain waveguide formed on a semiconductor substrate in which two grooves extending in an oscillation direction thereof are formed, wherein a current injection stripe is arranged between the two grooves. Preferably, a quantum well constituting an active layer of the semiconductor laser device is composed of GaAs. |
| 公开日期 | 2010-08-17 |
| 申请日期 | 2006-03-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84309]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OPTOENERGY, INC. |
| 推荐引用方式 GB/T 7714 | FUJIMOTO, TSUYOSHI. Semiconductor laser device. US7778298. 2010-08-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。