Manufacture of semiconductor light-emitting element
文献类型：专利
| 作者 | OOTAKI KANAME; KOKUBO YOSHIHIRO; HORIUCHI SHIGEKI; TAKAMIYA SABUROU |
| 发表日期 | 1983-12-24 |
| 专利号 | JP1983222581A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To simplify the manufacturing process as well as to cut down the cost of production for the titled light-emitting element by a method wherein a P type current blocking layer is thinly formed at the top part of the protrusion of a semiconductor substrate, whereas the current blocking layer is thickly formed on the region other than the protrusion, the component proportionate to the thickness of the P type current blocking layer located at the top part of the protrusion is dissolved, and a current path is completed by conneting an N type semiconductor substrate to an N type clad layer at the top part of the protrusion. CONSTITUTION:A protrusion II, to be used as a current path, is formed on an N type semiconductor substrate Then, a P type current blocking layer 2, an N type clad layer 3, a P type active layer 4 and a P type clad 5 are successively grown. The P type current blocking layer 2 is thinly formed at the top part of the protrusion II of the semiconductor substrate 1, the layer is thickly formed in thickness on the part III which is the region other than the protrusion II. The surface part 6 of the P type current blocking layer 2 is dissolved in the amount of the component of the thickness of the P type current blocking layer 2 using an unsaturated N type clad growing solution. The layer after the N type clad layer 3 are grown after the above dissolution has been finished by lowering the temperature. |
| 公开日期 | 1983-12-24 |
| 申请日期 | 1982-06-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84312]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | OOTAKI KANAME,KOKUBO YOSHIHIRO,HORIUCHI SHIGEKI,et al. Manufacture of semiconductor light-emitting element. JP1983222581A. 1983-12-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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