Manufacture of semiconductor laser
文献类型：专利
| 作者 | SHIMA AKIHIRO; SUZAKI WATARU |
| 发表日期 | 1987-12-09 |
| 专利号 | JP1987283685A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To sufficiently provide a difference from the thickness of a P-type AlGaAs active layer in an element by providing a groove on a wide ridge, then sequentially growing a clad layer and an active layer on the narrow and wide ridges to reduce the thickness of the active layer on the end as thin as possible. CONSTITUTION:When a P-type AlGaAs clad layer 2 is liquid grown on a substrate 1 formed with a groove 9 on a ridge 8b, a flat P-type AlGaAs clad layer 2 is grown on a ridge 8a. A P-type AlGaAs clad layer 2b is grown in a slightly recessed state as compared with the layer 2 therearound on the groove 9. Then, when a P-type AlGaAs active layer 3 is grown, a P-type AlGaAs active layer 3a is grown by a ridge effect in reduced thickness on the ridge 8a, and so grown as to bury the recess formed by a P-type AlGaAs clad layer 2b, and this part is increased in thickness. Thereafter, the layers are sequentially grown to form a semiconductor laser. |
| 公开日期 | 1987-12-09 |
| 申请日期 | 1986-05-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84316]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | SHIMA AKIHIRO,SUZAKI WATARU. Manufacture of semiconductor laser. JP1987283685A. 1987-12-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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