半導体レーザ
文献类型：专利
| 作者 | 斉藤 勝利; 小林 正道; 反町 進; 柏田 泰利; 茅根 直樹 |
| 发表日期 | 1997-04-25 |
| 专利号 | JP2633833B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To provide bonding to a heat-radiating body on any side of a P electrode and an N electrode and mounting in a package by a method wherein both of the P and N electrodes are provided with each barrier layer, which prevents the constituent metal of a substrate semiconductor from diffusing outward and also, prevents solder from diffusing into the interior. CONSTITUTION:In the formation of the substrate crystal of a GaAs/GaAlAs semiconductor laser, a selective P-type diffused layer 23, which penetrates an N-type GaAs cap layer 21 and reaches a P-type GaAlAs clad layer 22, is first formed in advance. Then, a P-type electrode layer is provided on the surface of a semiconductor wherein there exists the diffused layer 23, Mo is vacuum- evaporated to form a P-type ohmic electrode layer 27, Pt is continuosly evaporated to form a diffusion barrier layer 28 and lastly, Au is continuously evaporated to provide a metallic layer of bonding. Similarly, on the side of an N-type GaAs substrate 26, a tree-layer structure ohmic electrode layer 30 consisting of AuGe-Pt-Au is vacuum-evaporated, Pt to consititute a diffusion barrier layer 28 is continuosly evaporated and lastly, Au is continuosly evaporated to form a metallic layer for bonding. |
| 公开日期 | 1997-07-23 |
| 申请日期 | 1986-07-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84319]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 斉藤 勝利,小林 正道,反町 進,等. 半導体レーザ. JP2633833B2. 1997-04-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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