Semiconductor light emitting element
文献类型：专利
| 作者 | HIRATANI YUJI; KASHIWA TORU |
| 发表日期 | 1990-01-30 |
| 专利号 | JP1990027782A |
| 著作权人 | HIKARI GIJUTSU KENKYU KAIHATSU |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To prevent the deterioration of heat characteristics as each loss is controlled and check the deterioration of laser characteristics by forming a photo-conductive path involving an active layer on the side face of a stage on a board and providing a distribution reflector composed of a semiconductor multilayer film in a recess part of the stage. CONSTITUTION:A projecting part 32 and a recess part 33 are formed a stage on the upper part of a semi-insulating substrate 31, both facing each other. The projecting part 32 of the stage consists of laminating structure with a distribution reflector 35 by an n-type semiconductor multilayer film, an n-type crystal layer 36 and another distribution reflector 37 by another n-type semiconductor multilayer film. An n-type clad layer 38, an active layer 39 and a p-type first clad layer 40 are formed successively. A p-type second clad layer 31 bent at a right angle is formed from the recess part 33 of the stage to the side face 34 thereof. Thereby the deterioration of heat characteristics is prevented as each loss is controlled and the other deterioration of laser characteristics can be checked. |
| 公开日期 | 1990-01-30 |
| 申请日期 | 1988-07-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84323]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI GIJUTSU KENKYU KAIHATSU |
| 推荐引用方式 GB/T 7714 | HIRATANI YUJI,KASHIWA TORU. Semiconductor light emitting element. JP1990027782A. 1990-01-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。