Semiconductor laser device
文献类型：专利
| 作者 | IWAMURA HIDETOSHI; NAGANUMA MITSURU |
| 发表日期 | 1991-03-20 |
| 专利号 | JP1991066189A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make it possible to control logical operation and high performance based on bistable oscillation, shutdown control by low consumption power by providing a plurality of electrically separated segment electrodes and optical waveguide passages, and controlling the linear type saturable absorption of excitons present in an active layer. CONSTITUTION:On an N-type semiconductor substrate 4 are laminated an N-type layer 4' which serves as a clad layer, a superstructure 9 which serves as an active layer and a P-type clad layer 6 one by one. It is provided with a P electrode metal layer 7 which is connected with an N-electrode metal layer 8 which is interfaced with the P-type clad layer 8. When electric current is allowed to flow to electrodes while reverse bias voltage is applied over to saturable absorption regions 13 and 23, the saturable absorption regions of the electrodes 12 and 13 are in a state where a large absorption factor is available. When only input light (1) falls thereupon, the saturable absorption region of the electrode 13 can be easily saturated. If an attempt is made to set the voltages of the current of the electrodes (1) and (2), and the voltage of the electrodes 13 and 23, OR operation will be carried out in terms of the input (1)and (2). In the case of storing, the reverse bias voltage for the electrodes 12 and 23 can be further increased. |
| 公开日期 | 1991-03-20 |
| 申请日期 | 1989-08-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84326]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | IWAMURA HIDETOSHI,NAGANUMA MITSURU. Semiconductor laser device. JP1991066189A. 1991-03-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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