Semiconductor laser
文献类型：专利
| 作者 | NAKATSUKA SHINICHI; YAMASHITA SHIGEO; KONO TOSHIHIRO; KAJIMURA TAKASHI |
| 发表日期 | 1991-07-09 |
| 专利号 | JP1991159286A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser of structure that an active layer can be easily formed thin and a clad layer also can be easily formed as thick as required by a method wherein a recess which does not extend beyond the edge of the upside of a ridge is provided to both the sides of a groove which constitutes a laser stripe on a current blocking layer on the ridge on a first clad layer side. CONSTITUTION:A groove is provided to a part of a current blocking layer 2 located at the upper center part of a ridge structure 9, a laser stripe 7 is formed of the same material with a first clad layer 3, and a recess 8 is provided to both the sides of the groove of the current blocking layer 2 provided to the upper part of the ridge structure so as to keep the thickness of the clad layer 3. As mentioned above, a recess is provided to the current blocking layer 2 on both the sides of laser stripe 7, the thickness of the clad layer 3 can be ensured and an active layer can be formed thin even if the ridge acts strongly at a liquid phase growth process. As the recess 8 is formed through an etching process, it is excellent in reproducibility. By this setup, a semiconductor laser, where an active layer is formed thin and a clad layer can be precisely formed as thick as required, can be obtained. |
| 公开日期 | 1991-07-09 |
| 申请日期 | 1989-11-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84331]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | NAKATSUKA SHINICHI,YAMASHITA SHIGEO,KONO TOSHIHIRO,et al. Semiconductor laser. JP1991159286A. 1991-07-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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