Semiconductor laser
文献类型：专利
| 作者 | ASAI MAKOTO |
| 发表日期 | 1988-07-16 |
| 专利号 | JP1988172483A |
| 著作权人 | OMRON TATEISI ELECTRONICS CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To attain the relaxation of lattice mismatch, the flattening of a growth surface and the prevention of the generation of a non-radiative center comparatively easily by forming a buffer layer in a graded superlattice buffer layer, the mixed crystal ratio of a barrier of which is graded toward a clad layer from a substrate and the composition of a well of which is kept constant. CONSTITUTION:A graded superlattice buffer layer 2 is shaped onto an n-GaAs substrate 1 in a semiconductor laser, and an n-AlyGa1-yAs lower clad layer 3, an active layer 4, a p-AlyGa1-yAs upper clad layer 5 and a p-GaAs cap layer 6 are formed onto the layer 2 in succession. A large number of AlxGa1-xAs barriers (barrier layers) 2a and n-GaAs wells (well layers) 2b are laminated alternately in the graded superlattice buffer layer 2, and the mixed crystal ratio (x) of Al in the barrier 2a is reduced near the substrate 1, increased in a stepped manner toward the clad layer 3, and equalized approximately to the Al mixed crystal ratio (y) of the clad layer 3 in the vicinity of the clad layer 3. |
| 公开日期 | 1988-07-16 |
| 申请日期 | 1987-01-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84333]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRONICS CO |
| 推荐引用方式 GB/T 7714 | ASAI MAKOTO. Semiconductor laser. JP1988172483A. 1988-07-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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