Manufacture of semiconductor device
文献类型：专利
| 作者 | MORIMOTO MASAHIRO; HORI KENICHI |
| 发表日期 | 1983-10-19 |
| 专利号 | JP1983178525A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To make the sides of any residual semiconductor layers smooth for manufacturing a semiconductor with narrow width by a method wherein multiple semiconductors are laminated and grown on a semiconductor substrate to perform selective chemical etching of the top layer for dry-etching the lower layers successively utilizing the top layer as a mask. CONSTITUTION:N type InP clad layer 11, InGaAsP active layer 12, P type clad layer 13, InGaAsP contact layer 14 and InP layer 15 later to be a mask are epitaxially grown on N type InP substrate 10 with face index of (100). Next, a mask 16 made of SiO2 corresponding to the shapes of laser pattern is provided on the layer 15 to be etched while providing the layer 15 with specified width. Then the mask 16 is removed to use the remaining layer 15 as a mask for performing reactive ion etching of the lower layers 14, 13, 12 and 11 to make the sides A of said layers smooth (anti 1, 1, 0). Through these procedures, the width of the laminated layers may be made narrow down to the limit within which a pattern can be formed to make suitable for laser and the like. |
| 公开日期 | 1983-10-19 |
| 申请日期 | 1982-04-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84334]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | MORIMOTO MASAHIRO,HORI KENICHI. Manufacture of semiconductor device. JP1983178525A. 1983-10-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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