Surface emitting semiconductor laser device
文献类型：专利
| 作者 | SHINAGAWA, TATSUYUKI; YOKOUCHI, NORIYUKI; SHIINA, YASUKAZU; KASUKAWA, AKIHIKO |
| 发表日期 | 2002-11-14 |
| 专利号 | US20020167985A1 |
| 著作权人 | FURUKAWAW ELECTRICO CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emitting semiconductor laser device |
| 英文摘要 | A surface emission semiconductor laser device includes a GaAs substrate and a layer structure having a plurality of constituent layers including an active layer, a pair of cladding layers, and a pair of multilayer semiconductor mirrors. One of the multilayer mirrors includes an AlAs layer having an Al-oxidized area forming a current confinement structure. At least one of the constituent layers, such as active layer or one of the multilayer mirrors, has an oxygen density of 1x1018 cm-3 or less. The laser device suppresses reduction of the optical output power with time. |
| 公开日期 | 2002-11-14 |
| 申请日期 | 2002-04-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84336]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWAW ELECTRICO CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | SHINAGAWA, TATSUYUKI,YOKOUCHI, NORIYUKI,SHIINA, YASUKAZU,et al. Surface emitting semiconductor laser device. US20020167985A1. 2002-11-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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