Semiconductor laser device
文献类型：专利
| 作者 | TATE HISAFUMI; UNNO TSUNEHIRO |
| 发表日期 | 1990-09-19 |
| 专利号 | JP1990237191A |
| 著作权人 | HITACHI CABLE LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To realize the high-output, good-assembly-workability and further small-sized semiconductor laser device by forming a distributed refractive index lens for condensing a laser beam and guiding the beam to a light-waveguide path, unitarily together with a second harmonic wave generating element. CONSTITUTION:On a mounting base 6, a semiconductor laser diode 1 and an SHG element 4 for generating the second harmonic wave are mounted in order in the advance direction of the laser beam. Together with a laser beam input part of the SHG element 4, a distributed refractive index lens 15 for condensing the laser beam and guiding the beam to a light-waveguide 8 is formed unitarily. When the laser beam is emitted from the semiconductor laser element 1, the laser beam of wide emission angle is condensed on the distributed refractive index lens 15 and are guided continuously as they are to the photo-waveguide path 8 arranged on the SHG element 4. Then, the laser beam advances in the photo-waveguide path 8 so that the second harmonic wave is generated efficiently and are emitted from an output part of the SHG element 4. Thus, a condensor lens can be omitted, and accordingly the high-output, good-assembly- workability and further small-sized semiconductor laser device can be contrived. |
| 公开日期 | 1990-09-19 |
| 申请日期 | 1989-03-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84337]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI CABLE LTD |
| 推荐引用方式 GB/T 7714 | TATE HISAFUMI,UNNO TSUNEHIRO. Semiconductor laser device. JP1990237191A. 1990-09-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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