Manufacture of semiconductor laser element
文献类型：专利
| 作者 | KURIHARA HARUKI; HOSOYA TOSHIAKI |
| 发表日期 | 1989-10-02 |
| 专利号 | JP1989246889A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To improve the manufacture of a semiconductor laser element in yield by a method wherein an active layer is formed through a liquid phase crystal growth performed for 5 seconds or more so as to satisfy the relation specified between a supercooling temperature T, a slow cooling rate R, a growth time t, and a growth temperature T. CONSTITUTION:A first clad layer 22 composed of n-Ga0.67Al0.33As, an active layer 23 formed of AlxGax-1As(0<=x<=1), for instance, p-Ga0.95Al0.33As, a second clad layer 24 consisting of p-Ga0.67Al0.33As, and an ohmic contact layer 25 formed of p-GaAs are successively laminated from the top of the surface of a substrate 21 of n-GaAs single crystal through a liquid phase crystal growth. And, electrode metal layers 26 and 27 are formed and resonator faces 28 and 29 are built through the cleavage to form a semiconductor laser element. The active layer 23 is made to grow five seconds or more under such a condition that is represented by an equation 1, where, for instance, a growth temperature T is 815 deg.C, a supercooling temperature T is equal to 0.6 deg.C, and a growth time is 10seconds. By these processes, the manufacture of a semiconductor laser element can be improved in yield. |
| 公开日期 | 1989-10-02 |
| 申请日期 | 1988-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84339]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KURIHARA HARUKI,HOSOYA TOSHIAKI. Manufacture of semiconductor laser element. JP1989246889A. 1989-10-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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