Semiconductor laser device
文献类型：专利
| 作者 | KAWADA SEIJI |
| 发表日期 | 1991-02-12 |
| 专利号 | JP1991032089A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To diminish an astigmatism by making both side end parts of an active layer consisting of a multiple quantum well into those of mixed crystals by use of a p-type dopant so as to prevent a delay of the beams on both the side end parts of the active layer. CONSTITUTION:On a p-type GaAs substrate 1, a p-type Ga0.5In0.5P layer 2 is formed and further a clad layer 3 consisting of p-type Al0.5In0.5P formed into mesa-stripe form is formed on that. Next, a multiple quantum well layer 4 of AlGaInP is formed on the clad layer 3, and a clad layer 5 consisting of n-type AlInP is formed on that. On the wafer thus formed, an SiO2 mask is formed and the substrate is etched down to the midst of the clad layer 3 so as to form a p-type GaAs layer 7. By this etching, mesa stripes are formed and the diffused p-type dopant acts to surrounds the active layer composed of the well layer 4 with mixed crystals. As a result, a delay of a wave surface in both side end parts of the active layer is prevented and an astigmatism can be diminished. |
| 公开日期 | 1991-02-12 |
| 申请日期 | 1989-06-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84343]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KAWADA SEIJI. Semiconductor laser device. JP1991032089A. 1991-02-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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