Semiconductor light emitting element
文献类型：专利
| 作者 | HOSODA MASAHIRO; TAKAHASHI HISAHOSHI; TSUNODA ATSUTOSHI; SUGA YASUO; SUYAMA NAOHIRO; MATSUI KANEKI |
| 发表日期 | 1992-02-13 |
| 专利号 | JP1992042985A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To reduce a threshold current, resistance, generated heat and the driving current of an element by providing a semiconductor layer containing at least Al>=zGa1-zAs layer between a second clad layer and a contact layer. CONSTITUTION:In a semiconductor light emitting element having a first clad layer 21 made of (AlyGa1-y)xIn1-xP mixed crystal (0<=x<=1, 0<=y<=1), an active layer 22, a second clad layer 23 made of (AlyGa1-x)xIn1-xP mixed crystal (0<=x<=1, 0<=y<=1), and a contact layer 25 sequentially formed on a semiconduc tor substrate 10, one or more semiconductor layers, each containing at least AlzGa1-zAs layer 24 (0<=z<=1) are provided between the layer 23 and the layer 25. |
| 公开日期 | 1992-02-13 |
| 申请日期 | 1990-06-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84346]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | HOSODA MASAHIRO,TAKAHASHI HISAHOSHI,TSUNODA ATSUTOSHI,et al. Semiconductor light emitting element. JP1992042985A. 1992-02-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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