Manufacture of semiconductor device
文献类型：专利
| 作者 | YURI MASAAKI; OTA KAZUNARI |
| 发表日期 | 1990-05-14 |
| 专利号 | JP1990125686A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To grow crystals of a III-V compound semiconductor having desirable characteristics and to decrease serial resistance of a semiconductor device by dipping the surface of a semiconductor layer exposed to atmosphere in an aqueous solution containing hydrogen fluoride for the purpose of removing an oxide film produced on said exposed surface. CONSTITUTION:A linear recess 11 is formed in a current blocking layer 6 so that the surface of a clad layer 5 containing Al which is temporarily exposed to atmosphere is etched with aqueous solution containing hydrogen fluoride for removing an oxide film produced by reaction with oxygen within atmosphere. Then, crystals of a III-V compound semiconductor 7 are grown on the surface thus treated. In this manner, the crystals of the III-V compound semiconductor 7 formed on the surface of the semiconductor layer 5 is allowed to have desirable characteristics. Further, serial resistance of the semiconductor device can be decreased substantially. |
| 公开日期 | 1990-05-14 |
| 申请日期 | 1988-11-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84350]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YURI MASAAKI,OTA KAZUNARI. Manufacture of semiconductor device. JP1990125686A. 1990-05-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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