Semiconductor laser element
文献类型：专利
| 作者 | YAMAMOTO SABURO; MORIMOTO TAIJI; SASAKI KAZUAKI; KONDO MASAKI |
| 发表日期 | 1990-03-20 |
| 专利号 | JP1990079485A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To provide a semiconductor laser element which can reduce the return light noise effectively by using a Si dopant for an n-type electroconductive semiconductor layer in a double hetero joint type semiconductor laser element, in which an active layer is pinched by a p-type and n-type electroconductive semiconductor layers having a larger prohibit band width than the active layer. CONSTITUTION:After an n-type GaAs current checking layer 6 is grown on a p-type GaAs base board 1, a V-shaped groove 9 is formed so that the tip reaches from the surface of this current checking layer to the substrate Then a Mg-doped p-type Ga0.45Al0.55As clad layer 2 is grown to fill the V-shaped groove 9. Further an undoped Ga0.87Al0.13As active layer 3, a Si-doped n-type Ga0.45Al0.55As clad layer 4, and a Te-doped n-type GaAs cap layer 5 are grown. An n-side electrode 7 of Au-Ge is formed on the surface of this cap layer, and the rear surface of the substrate 1 is ground into a specified thickness, and after forming of a p-side electrode 8 of Au-Zn, a resonance surface is formed by cleavage. This accomplishes a vertical mode and return light noise characteristic, in which oscillation occurs in a single vertical mode with its mode ratio approx. 10:1, and the relative noise strength is as low as under -130dB/Hz. |
| 公开日期 | 1990-03-20 |
| 申请日期 | 1988-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84351]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABURO,MORIMOTO TAIJI,SASAKI KAZUAKI,et al. Semiconductor laser element. JP1990079485A. 1990-03-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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