Semiconductor laser device
文献类型：专利
| 作者 | KURONAGA KOUICHI |
| 发表日期 | 1990-10-23 |
| 专利号 | JP1990260679A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable a laser device of this design to be easily manufactured by a method wherein a window region formed of a specific semiconductor compound layer is provided to the end face of an optical waveguide and is specified in length, whose peripheral part is formed into an arc surface of a condensing lens to improve the coupling efficiency of the window region with an optical fiber. CONSTITUTION:A GaInAsP active layer 22 serving as an optical waveguide 31, a P-InP clad layer 23, and a P-GaInAsP ohmic contact layer 24 are successively formed in lamination on an N-InP substrate 21 through a crystal growth method. The double hetero-structure section composed of layers 22-24 is etched up to the underside of the active layer 22 into an inverted mesa stripe, and an incident end face 32 and a projecting end face 33 side are also subjected to etching. Then, a P-InP buried layer 25 and an N-InP layer 26 are successively grown along the end face of the mesa stripe and the end faces 32 and 33 side to form a buried hetero-structure provided with a window region. The lengths of the layers 25 and 26 are made equal to or larger than 30mum, and both the end faces of the substrate 21, and the layers 25 and 26 are formed into a protrudent arc part 27. |
| 公开日期 | 1990-10-23 |
| 申请日期 | 1989-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84356]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KURONAGA KOUICHI. Semiconductor laser device. JP1990260679A. 1990-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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