Manufacture of semiconductor laser
文献类型：专利
| 作者 | TSUKADA NORIAKI; FUJIWARA KENZO; TOKUDA YASUKI |
| 发表日期 | 1988-04-12 |
| 专利号 | JP1988081888A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the fine period pitch of the diffraction lattice of a distributed feedback type laser easily by a method wherein two types of epitaxial layers with different compositions are alternately laminated with a certain period by epitaxial growth to form a super-lattice on a semiconductor substrate and the substrate is cleaved and the super-lattice is employed as the diffraction lattice. CONSTITUTION:Two types of N-type epitaxial layers with different compositions, i.e. N-type AlX1Ga1-X1As layers 11 and N-type AlX2Ga1-x2As layers 12, are alternately laminated a number of times (several tens-several hundreds) with a certain period by epitaxial growth such as molecular beam epitaxy (MBE) or organic metal vapor phase deposition (MOCVD) on a GaAs substrate 10 to form a wafer composed of a multilayer periodical structure, i.e. a super-lattice 13. After the epitaxial growth of the wafer is finished, the face (110) of the wafer is cleaved along a cut-line 2 A barrier layer 5, an active layer 5, a cladding layer 4 and a cap layer 9 are formed and laminated in this order by the same processes as for manufacture of an ordinary laser device. Then, after the GaAs substrate 10 is polished off, electrodes 1 are formed on both the surfaces. |
| 公开日期 | 1988-04-12 |
| 申请日期 | 1986-09-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84367]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TSUKADA NORIAKI,FUJIWARA KENZO,TOKUDA YASUKI. Manufacture of semiconductor laser. JP1988081888A. 1988-04-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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