Semiconductor light-emitting device and manufacture thereof
文献类型：专利
| 作者 | SHIMA KATSUTO |
| 发表日期 | 1985-08-05 |
| 专利号 | JP1985148184A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To improve yield, and to lower a threshold by selectively etching a GaAs substrate having a (100) face orientation in the direction while selecting the composition of an etching liquid and the conditions of etching to form a striped groove. CONSTITUTION:A GaAs substrate 1, the surface thereof has a (100) face, is etched in the direction by using a liquid at a temperature of 25 deg.C consisting of not less than 90vol% concentrated sulfuric acid, not more than 2vol% hydrogen peroxide and water as an etching liquid, and a striped groove 2, a section thereof takes an approximately semicircular shape, is formed. A GaAlAs clad layer 3, a GaAs active layer 4, a GaAlAs clad layer 5 and a GaAs cap layer 6 are shaped on the groove 2 in succession through a liquid phase epitaxial method, and electrodes 7, 8 are disposed to the upper and lower sections of these layers. |
| 公开日期 | 1985-08-05 |
| 申请日期 | 1984-01-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84368]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | SHIMA KATSUTO. Semiconductor light-emitting device and manufacture thereof. JP1985148184A. 1985-08-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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