Liquid phase epitaxial growth
文献类型：专利
| 作者 | SUGIMOTO YOSHIMASA |
| 发表日期 | 1984-10-15 |
| 专利号 | JP1984181015A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxial growth |
| 英文摘要 | PURPOSE:To control the impurity concentration of a liquid phase growth layer in the liquid phase epitaxial growth using a solvent and a solute by mixing the material in which an impurity is previously added as the solute. CONSTITUTION:A Zn-doped InP crystal is used as a material in which an impurity is previously added for controlling the impurity concentration of N type InP. A horizontal slide boat is used as a growth boat and In, InP and Zn-doped InP are arranged in a reservoir of the growth solution. Then the temperature of the oven is increased and kept as it is for about 1hr after that in order to dissolve the solute in the solvent enough to make the solution uniform. Nextly, the temperature of the oven is slightly decreased and kept for about 2hr, after which the temperature is decreased by a constant speed. Then, the growth solution is brought in contact with the InP substrate to start LPE growth and these are kept as it is for the predetermined hours to obtain the InP growth layer having the desired thickness. |
| 公开日期 | 1984-10-15 |
| 申请日期 | 1983-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84377]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | SUGIMOTO YOSHIMASA. Liquid phase epitaxial growth. JP1984181015A. 1984-10-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。