Manufacture of semiconductor laser device
文献类型：专利
| 作者 | YAGI TETSUYA |
| 发表日期 | 1990-04-26 |
| 专利号 | JP1990114587A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent a crystal interface from being oxidized and to enhance a crystalline property near it by a method wherein a grading is formed, a meltback operation is thin executed twice inside a liquid epitaxial apparatus and, after that, a third clad layer and a contact layer are grown epitaxially one after another. CONSTITUTION:In a first epitaxial growth process, a first clad layer 2, an active layer 3, a second clad layer 4, a light waveguide layer 6 and a mask layer 10 are formed one after another on a substrate Then, the mask layer 10 is etched down to the light waveguide layer 5; a grading of a required shape is formed; after that, this assembly is inserted into a liquid epitaxial apparatus. Accordingly, this wafer is placed inside the liquid epitaxial apparatus until a second epitaxial growth process is finished; it is not exposed to the air. After that, a third clad layer 6 and a contact layer 7 are grown epitaxially one after another in the second epitaxial growth process; the wafer is obtained. Thereby, an interface between the light waveguide layer 5 and the third clad layer 6 is not oxidized; a crystalline property near a regrowth interface can be kept good. |
| 公开日期 | 1990-04-26 |
| 申请日期 | 1988-10-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84381]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YAGI TETSUYA. Manufacture of semiconductor laser device. JP1990114587A. 1990-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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