半導体レーザ
文献类型：专利
| 作者 | 池田 外充 |
| 发表日期 | 1997-02-13 |
| 专利号 | JP2608325B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To enable an oscillating wave to be easily controlled in wavelength by a method wherein an end face loss is so set as to enable a semiconductor laser of this design to oscillate light correspondent to a large quantum energy when a current is uniformly injected and to oscillate light correspondent to a small quantum energy when a current is not uniformly injected. CONSTITUTION:A resonator is formed of a semiconductor which includes an active layer of quantum structure and laminated on a board 1, P electrodes 7 and 7 are provided to regions. I and. II of the resonator in a resonating direction, and lights correspondent to different quantum energies are made to oscillates by separately controlling currents injected through the electrodes 7 and 7 in density. The end face loss of the resonator is so set as to obtain a short wave light through the sum of resonator lights L1 and L2 at the uniform injection of a current, so that a long wave light can be oscillated through a length difference between the resonator lengths L1 and L2 at the nonuniform injection of a current. The end face loss can be controlled by coating one of the end faces with a dielectric film. |
| 公开日期 | 1997-05-07 |
| 申请日期 | 1989-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84382]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 池田 外充. 半導体レーザ. JP2608325B2. 1997-02-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。