Semiconductor laser element
文献类型：专利
| 作者 | KAWADA HATSUMI |
| 发表日期 | 1986-05-19 |
| 专利号 | JP1986100986A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To prevent a formation at two points of light-emitting spots, and to obtain a stable transverse mode by forming a striped groove to a V shape. CONSTITUTION:A striped groove, which reaches the inside of a second clad layer 4 from the surface of a current constriction layer 5 and is formed, is shaped to a V form. Consequently, an oscillating threshold can be lowered, and not only characteristics fit for an optical-disk light source such as the improvement of the circle of beams and the reduction of astigmatism are obtained but also a stable fundamental transverse mode is acquired because of the V-shaped striped groove. That is, there is only one position of a corner section where the film thickness of a high refractive-index layer 6 is thickened on the growth of the layer 6 in the V-shaped striped groove. As a result, beams are wave-guided only at one position of the corner section. Accordingly, beams are not wave-guided at two positions as seen in conventional devices and do not emit light, thus acquiring laser beams at the stable transverse mode. |
| 公开日期 | 1986-05-19 |
| 申请日期 | 1984-10-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84384]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KAWADA HATSUMI. Semiconductor laser element. JP1986100986A. 1986-05-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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