半導体レーザ装置
文献类型：专利
| 作者 | 鈴木 信夫 |
| 发表日期 | 1998-12-18 |
| 专利号 | JP2865325B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To decrease a leakage current and to enhance an optical output when an injection current is at a high level by a method wherein a double-hetero PN junction, a buried PN junction including an active layer, and a sudormorphic layer are provided. CONSTITUTION:A current is trapped in an active layer 3 through a diffusion potential difference between a double-hetero PN junction composed of the active layer 3 and clad layers 2 and 6 and a buried PN junction formed between a second semiconductor layer 6 and a fifth semiconductor layer 5. When a current injection is at a low level, the buried PN junction is not turned ON, so that no leakage current flows. When a current injection is enhanced in level, a voltage applied to the buried PN junction becomes high to enable a leakage current to start flowing. At this point, the pseudomorphic layer 4 functions as a barrier to prevent a leakage current from increasing. By this setup, a leakage current can be decreased and an optical output can be enhanced when a current injection is at a high level. |
| 公开日期 | 1999-03-08 |
| 申请日期 | 1989-09-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84388]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 鈴木 信夫. 半導体レーザ装置. JP2865325B2. 1998-12-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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