Semiconductor laser element
文献类型：专利
| 作者 | SAWAI MASAAKI |
| 发表日期 | 1985-10-04 |
| 专利号 | JP1985195983A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To enhance the reliability and the yield by reducing the area of a buried layer extended at both sides of an active layer of a BH-type semiconductor laser element, thereby decreasing the rate of possibility of generating ungrown region in the buried layer and reducing the improper characteristic. CONSTITUTION:A wafer 14 has an N type InP substrate 1, an N type InP buffer layer 2, an InGaAsP active layer 3, a P type InP clad layer 4, a P type InGaAsP cap layer 5 in a multilayer grown layer 15. The wafer 14 is partly etched, and a P type InP blocking layer 6, an N type P-buried layer 7, an N type InGaAsP cap layer 8 are buried. With an insulating film 10 as a mask zinc is implanted to form a zinc diffused region 9. An anode electrode 11 and a cathode electrode 12 are formed. The area of the buried layer for the area of the element becomes extremely narrow to reduce the frequency of occurring an ungrown region feasible occurring in the layer 6, thereby decreasing and preventing the leakage current passing the ungrown region from occurring. |
| 公开日期 | 1985-10-04 |
| 申请日期 | 1984-03-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84389]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SAWAI MASAAKI. Semiconductor laser element. JP1985195983A. 1985-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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