Manufacture of semiconductor light-emitting device
文献类型：专利
| 作者 | TSUBURAI YASUHIKO; NISHIKAWA YUKIE; ISHIKAWA MASAYUKI; KOKUBU YOSHIHIRO |
| 发表日期 | 1990-10-25 |
| 专利号 | JP1990262388A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To enhance a carrier concentration in a p-type clad layer by a method wherein a mesa stripe is formed at a double heterojunction structure part on an n-type GaAs substrate, then, N-type GaAs current stopping layers are respectively grown under the side parts of the mesa stripe. CONSTITUTION:An n-type In0.5(Ga0.3Al0.5)0.5P clad layer 12, an undoped In0.5Ga0.5P active layer 13, a p-type In0.5(Ga0.3Al0.7)0.5P clad layer 14, a P-type In0.5Ga0.5P contact layer 15 and an n-type GaAs cap layer 16 are continuously grown on an n-type GaAs substrate 1 Then, the layer 16 is removed using an (H2SO4+H2 O2+H2O) etching liquid. subsequently, an SiO2 film 17 is formed. The layer 15 is removed using a (Br2+HBr+H2O) etching liquid using the film 17 as a mask and moreover, the layer 14 is etched with a hot phospheric acid to a desired depth to form a mesa stripe. N-type GaAs blocking layers 18 which each act as a current stopping layer are selectively grown under the side parts of the mesa stripe using the film 17 as a mask. After the film 17 is removed, a P-type GaAs ohmic layer 19 is grown. Thereby, a rib waveguide type semiconductor laser is completed. |
| 公开日期 | 1990-10-25 |
| 申请日期 | 1989-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84392]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | TSUBURAI YASUHIKO,NISHIKAWA YUKIE,ISHIKAWA MASAYUKI,et al. Manufacture of semiconductor light-emitting device. JP1990262388A. 1990-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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