Nitride semiconductor laser device
文献类型：专利
| 作者 | KAWAGUCHI, YOSHINOBU; KAMIKAWA, TAKESHI; ITO, SHIGETOSHI |
| 发表日期 | 2010-09-07 |
| 专利号 | US7792172 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor laser device |
| 英文摘要 | A nitride semiconductor laser device has a multilayer structure formed by stacking a plurality of nitride semiconductor layers made of hexagonal nitride semiconductors, while the multilayer structure is provided with a waveguide structure for guiding a laser beam, the nitride semiconductor layers forming the multilayer structure are stacked in a direction substantially perpendicular to the c-axes of the hexagonal nitride semiconductors constituting the nitride semiconductor layers, a first cavity facet forming a side surface of the waveguide structure is a c-plane having Ga-polarity, a second cavity facet forming another side surface of the waveguide structure opposed to the first cavity facet is a c-plane having N-polarity, a crystalline nitrogen-containing film is formed on the surface of the first cavity facet, and the reflectance of the first cavity facet is smaller than the reflectance of the second cavity facet. |
| 公开日期 | 2010-09-07 |
| 申请日期 | 2008-10-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84393]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAWAGUCHI, YOSHINOBU,KAMIKAWA, TAKESHI,ITO, SHIGETOSHI. Nitride semiconductor laser device. US7792172. 2010-09-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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