Semiconductor laser device
文献类型：专利
| 作者 | TAKIGAWA SHINICHI; HAMADA TAKESHI; KUME MASAHIRO; SHIMIZU YUICHI |
| 发表日期 | 1990-10-01 |
| 专利号 | JP1990246184A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To offer an independent-drive type two-beam laser array in which a difference in a wavelength is small by a method wherein two semiconductor laser devices are installed on an identical light-emitting face, a high-reflectivity film is formed on the emission edge of one semiconductor laser device and a low-reflectivity film is formed on the emission edge of the other semiconductor laser device. CONSTITUTION:An electric current which has been constricted by an n-GaAs current-blocking layer 2 is injected into an AlGaAs active layer 4; a single longitudinal-mode oscillation is executed only at a wavelength near the Bragg wavelength decided by a cycle of a wave-shaped diffraction grating at an interface between an n-AlGaAs guide layer 6 and an n-AlGaAs clad layer 7. The emission edge of a laser A for recording use is coated with Al2O3 for high- output use and its reflectivity is set to 4%; the emission edge of a laser B for readout use is coated with Al2O3/Si for low-noise use and its reflectance is set to 30%. Reflecting end faces of the lasers A, B are coated with Al2O3/Si/Al2O3/Si, and their reflectivity is set to 94%. A difference in an oscillation wavelength between the laser A and the laser B is 1nm or lower in all operating states. |
| 公开日期 | 1990-10-01 |
| 申请日期 | 1989-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84394]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKIGAWA SHINICHI,HAMADA TAKESHI,KUME MASAHIRO,et al. Semiconductor laser device. JP1990246184A. 1990-10-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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