Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | OOSAKA SHIGEO |
| 发表日期 | 1985-07-16 |
| 专利号 | JP1985133783A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To form diffused layers of extremely small lateral dimensions by a method wherein diffusion components spreading in lateral directions are more reduced by using the difference in the coefficient of diffusion between GaAs and GaAlAs. CONSTITUTION:First, a high concentration diffused layer 7 is formed by P diffusion. Next, an intruding diffused layer 7' is formed by heat treatment. At the time, a GaAs cap laer 5 differs from a P GaabAlouAs clad layer 4 in the coefficient of diffusion by a factor of about 4 times; therefore, in the case of the diffused layer 7 being contained in the clad layer 4 previsouly, diffusion advances faster downward, and then a narrow diffusion width is produced. |
| 公开日期 | 1985-07-16 |
| 申请日期 | 1983-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84397]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | OOSAKA SHIGEO. Manufacture of semiconductor light emitting device. JP1985133783A. 1985-07-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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