Manufacture of semiconductor crystal
文献类型：专利
| 作者 | HIROTA KOJI; YOSHIKAWA MITSUO; ITO MICHIHARU; MARUYAMA KENJI |
| 发表日期 | 1986-10-11 |
| 专利号 | JP1986228634A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor crystal |
| 英文摘要 | PURPOSE:To prevent the epitaxial growth on the bask side of a semiconductor crystal substrate by bringing a crystal body of exactly the same material as that of the semiconductor crystal substrate in close contact to the back side of the substrate during the epitaxial growth. CONSTITUTION:The front and back surfaces of a CdTe substrate 14 subjected to epitaxial growth are mirror-polished and furthermore these are etched with a boron methanol solution. The dummy substrate 15 of CdTe which is attached closely to the back side of the CdTe substrate 14 is also subjected to the mirror polishing of the plane to be in contact with the substrate and the similar treatment to that for the CdTe substrate. The CdTe crystal substrate 14 and the dummy substrate 15 contained in a growth ampoule 11 are immersed in an HgCdTe solution by the similar method to the conventional method to effect the epitaxial growth. Even during the epitaxial growth, because both single crystal substrate and dummy substrate are mirror-polished, a contact property is good and if there is a slight gap, CdTe molecules are in a saturation state so that mercury can not enter and accordingly the HgCdTe layer is not formed. |
| 公开日期 | 1986-10-11 |
| 申请日期 | 1985-04-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84398]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | HIROTA KOJI,YOSHIKAWA MITSUO,ITO MICHIHARU,et al. Manufacture of semiconductor crystal. JP1986228634A. 1986-10-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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