Semiconductor laser
文献类型：专利
| 作者 | KOUNO TOSHIHIRO; OOTOSHI SOU; KAJIMURA TAKASHI; KAYANE NAOKI; NAKAMURA MICHIHARU |
| 发表日期 | 1985-06-06 |
| 专利号 | JP1985102787A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To contrive to reduce the wattless current and to convert the current into current of a lower threshold value by a method wherein the width of an optical guide layer is made larger than that of an active layer, current blocking layers are provided and the positions of interfaces to the active layer are respectively controlled. CONSTITUTION:Each mesa stripe of a first clad layer 2, an optical guide layer 3, an active layer 4, a second clad layer 5 and a cap layer 6 is laminatedly provided on a substrate 1 in the abovementioned order. The width of the optical guide layer 3 is formed wider than that of the active layer 4, and the side parts of the mesa stripes are buried with a multilayer film, which includes at least one layer of current blocking layers 7 of a reverse conductive type to that of the substrate 1 and has a larger forbidden band width than that of the active layer 4 and has a smaller refractive index than that of the layer 4. In this semiconductor laser constituted in such a way, at least one interface of either of the interface of the current blocking layer 7 and that of the current blocking layer 7 buried in the next place has been connected with the cap layer 6 at the sides of the mesa stripes. As a result, the sides of the active layer 4 are buried with the current blocking layers 7. |
| 公开日期 | 1985-06-06 |
| 申请日期 | 1983-11-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84402]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KOUNO TOSHIHIRO,OOTOSHI SOU,KAJIMURA TAKASHI,et al. Semiconductor laser. JP1985102787A. 1985-06-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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