Manufacture of semiconductor laser device
文献类型：专利
| 作者 | NISHIJIMA YOSHITO; FUKUDA HIROKAZU; SHINOHARA KOUJI; EBE KOUJI |
| 发表日期 | 1985-11-08 |
| 专利号 | JP1985224287A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the application of undesirable external force to an active layer, by forming mesa grooves; forming a stripe shaped light emitting region; forming protecting regions on both sides of the light emitting region, which are isolated by the grooves and have approximately the same height as and wider width than the light emitting region. CONSTITUTION:On a P type PbTe plate 1a, which is thicker than a substrate 1, semiconductor layers 2a, 3a and 4a comprising P type PbTeSe, PbSnTe and N type PbTeSe, are epitaxially grown sequentially. Then, mesa etching of the semiconductor layers is performed. When a buffer layer 2, an active layer 3 and a top layer 4 are formed, protecting stripe layers 10 are simultaneously formed on both sides of the active layer 3 with a distance being provided. Then an embedded layer 5 is formed by the epitaxial growth of an N type PbTeSe layer. The substrate 1 is formed by polishing the back surface of the substrate 1a. An insulating film 6 is formed by anode oxidation through a resist pattern 9. Electrodes 7 and 8 are formed by the evaporation of gold. The product is separated into individual chips by cleavage. Thus the chips are completed. Therefore application of undesirable external force to the active layer is reduced, and the production yield rate of the semiconductor laser chip can be improved. |
| 公开日期 | 1985-11-08 |
| 申请日期 | 1984-04-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84404]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NISHIJIMA YOSHITO,FUKUDA HIROKAZU,SHINOHARA KOUJI,et al. Manufacture of semiconductor laser device. JP1985224287A. 1985-11-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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