Semiconductor laser and its manufacture
文献类型：专利
| 作者 | UENO YOSHIYASU; HOTTA HITOSHI |
| 发表日期 | 1991-06-04 |
| 专利号 | JP1991131082A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To suppress optical damage at the cleavage edge of a resonator by making it have multilayer structure which includes double hetero structure consisting of an active layer of AlGaAs and an AlGaAs clad layer, and a pair of resonator faces vertical to the lamination face, and further replacing the arsenic atoms within AlGaAs or GaAs near this surface with phosphorous atoms. CONSTITUTION:An n-type AlGaAs clad layer 2, an AlGaAs active layer 3, a P-type AlGaAs clad layer 4, and a GaAs cap layer 5 are epitaxially grown in order on an n-type GaAs substrate The active layer 3 is put to the wave length equivalent to a band gap, and the clad layers 2 and 4 are put to the compositions which have greater band gaps. Resonator faces 7 are made by cleavage. A semiconductor laser bar formed this way is preserved for 60 minutes under the conditions of laser bar heating temperature of 600 deg.C, phosphin flow of 500sccm, and arsine flow of 30sccm within a quartz tube. Hereby, As within GaAs or Al GaAs near the resonator faces is replaced with P, and it becomes GaP or AlGaP. The depth of this replacement region from As to P is approximately 10nm. |
| 公开日期 | 1991-06-04 |
| 申请日期 | 1989-10-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84405]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | UENO YOSHIYASU,HOTTA HITOSHI. Semiconductor laser and its manufacture. JP1991131082A. 1991-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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