Semiconductor laser
文献类型：专利
| 作者 | HANAMAKI, YOSHIHIKO; ONO, KENICHI |
| 发表日期 | 2006-08-10 |
| 专利号 | US20060176923A1 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | In a semiconductor laser, a n-type AlGaInP clad layer is formed on a n-type GaAs substrate and an active layer having an emission wavelength of 600 to 850 nm is formed on the n-type AlGaInP clad layer. A p-type AlGaInP clad layer is formed on the active layer and a p-type AlGaAs contact layer in which the Al composition is controlled so that the p-type AlGaAs contact layer has an optical bandgap larger than that of the active layer is formed on the p-type AlGaInP clad layer. A p-type GaAs cap layer is formed on the p-type AlGaAs contact layer. |
| 公开日期 | 2006-08-10 |
| 申请日期 | 2005-10-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84414]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HANAMAKI, YOSHIHIKO,ONO, KENICHI. Semiconductor laser. US20060176923A1. 2006-08-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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