Semiconductor device
文献类型：专利
| 作者 | TASAI, KUNIHIKO; NAKAJIMA, HIROSHI; FUTAGAWA, NORIYUKI; YANASHIMA, KATSUNORI; ENYA, YOHEI; KUMANO, TETSUYA; KYONO, TAKASHI |
| 发表日期 | 2016-01-05 |
| 专利号 | US9231375 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device |
| 英文摘要 | A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of Inx1Aly1Ga1-x1-y1N, where x1>0 and y1>0, the second cladding layer being made of Inx2Aly2Ga1-x2-y2N, where0≦x2≦about 0.02 and about 0.03≦y2≦about 0.07. |
| 公开日期 | 2016-01-05 |
| 申请日期 | 2013-02-12 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84415]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | TASAI, KUNIHIKO,NAKAJIMA, HIROSHI,FUTAGAWA, NORIYUKI,et al. Semiconductor device. US9231375. 2016-01-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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