Semiconductor light emitting element
文献类型：专利
| 作者 | KINOSHITA HIDEAKI |
| 发表日期 | 1986-09-30 |
| 专利号 | JP1986220490A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To obtain a stable basic lateral mode and to control the characteristics accurately, by providing a protecting film, which is embedded in a second clad layer and has a low refractive index and sufficient etching selection ratio in the second clad layer, at the outside of a stripe groove. CONSTITUTION:On an n-type GaAs substrate 1, an n-type AlxGa1-xAs first clad layer 2, an undoped AlyGa1-yAs active layer 3, an AlzGa1-zAs second clad layer 4, a p-type GaAs protecting layer 9, a second clad layer 4' and an n-type GaAs current narrowing layer 5 are grown. Then mesa etching of only the layer 5 is performed by selective etching using a mask. The layer 4' is etched by using a fluoric acid solution. Thereafter, the protecting layer 9 is etched by an ammonia/H2O2 solution, and the surface of the layer 4 is exposed. Then a p-type AluGa1-uAs lightguide layer 6, a p-type AlvGa1-vAs third clad layer 7 and p-type GaAs contact layer 8 are grown, and a laser element is obtained. Since value of (h) is sufficiently small and the characteristics can be controlled uniformly, a stable lateral mode is obtained. |
| 公开日期 | 1986-09-30 |
| 申请日期 | 1985-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84419]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KINOSHITA HIDEAKI. Semiconductor light emitting element. JP1986220490A. 1986-09-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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