Semiconductor laser
文献类型：专利
| 作者 | SHINOHARA KOJI; NISHIJIMA YOSHITO; FUKUDA HIROKAZU; EBE KOJI |
| 发表日期 | 1986-07-16 |
| 专利号 | JP1986156787A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable to set up the periodical regions to select the oscillating mode of a laser beam separatedly from the optical waveguide by a method wherein the periodical striped regions are formed in the interior of the clad layer on one side of the clad layers holding the activate layer between them along the progressing direction of the laser beam. CONSTITUTION:A PbSnTe layer 11 is made to grow on an N-type PbTe substrate 4. Then, an etching is performed on the layer 11 up to reach the substrate 4 by a mesa etching method. At the time of this etching, the pitch between the striped patterns is decided by the desired laser beam wavelength. Then, an N-type PbTe layer (clad layer) 13 is made to grow on the substrate 4 as a clad layer. Successively, a PbTe layer (active layer) 1 is made to grow as an active layer, and furthermore, a P-type PbTe layer (clad layer) 12 is made to grow thereon as a clad layer. By this way, the periodical regions to select the oscillating mode of a laser beam can be set up in the interior of the clad layer on one side of the clad layers holding the active layer between them separatedly from the optical waveguide consisting of the active layer, thereby enabling to contrive the improvement of quality of the semiconductor laser and the reduction of the manufacturing manhour thereof. |
| 公开日期 | 1986-07-16 |
| 申请日期 | 1984-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84427]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SHINOHARA KOJI,NISHIJIMA YOSHITO,FUKUDA HIROKAZU,et al. Semiconductor laser. JP1986156787A. 1986-07-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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