Semiconductor light emitting device
文献类型：专利
| 作者 | IWAMURA HIDETOSHI; OOTSUKA KENJIYU; KOBAYASHI HIDENORI |
| 发表日期 | 1984-07-11 |
| 专利号 | JP1984119783A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To strength the selectivity for TE polarization without causing the increase threshold value current by using a super grating structure for an active layer, in a semiconductor laser wherein a diffraction grating of strong wavelength selectivity is integrated to a laser wave guide. CONSTITUTION:A DBR laser is formed of an N-GaAs substrate 1, an N-clad layer 2, an active layer 11, a P-clad layer 3, P-contact layer 4, Bragg reflection type (DBR) reflection parts 8 and 9, and electrodes 6 and 7. Here, the active layer 11 is composed of a GaAs/Al GaAs super grating layer, and has the super grating structure wherein a GaAs well layer and an AlXGa1-XAs barrier layer are alternately stacked to a multilayer. Thereby, the selectivity for TE polarization is strengthened by a difference of large gains of TE polarization and TM polarization due to the super grating structure, without damaging of a characteristic of excellence in the singleness of the vertical mode which the DBR laser has, and of excellence in the temperature stability of the laser oscillation wavelength; therefore a deflection surface can be stabilized. |
| 公开日期 | 1984-07-11 |
| 申请日期 | 1982-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84428]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | IWAMURA HIDETOSHI,OOTSUKA KENJIYU,KOBAYASHI HIDENORI. Semiconductor light emitting device. JP1984119783A. 1984-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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