Method of producing a semiconductor laser
文献类型：专利
| 作者 | TAKAHASHI, SHOGO |
| 发表日期 | 1990-12-25 |
| 专利号 | US4980313 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of producing a semiconductor laser |
| 英文摘要 | A method of producing a semiconductor laser including deposition a first film as a source of n type impurities on a portion of a semiconductor structure produced by growing at least a p type lower cladding layer, a quantum well active layer, and an n type upper cladding layer successively on a substrate, depositing a second film as a source of p type impurities at least on the surface of the semiconductor structure on both sides of and on the first film and annealing to diffuse p and n type impurities at the same time, thereby disordering portions of the quantum well except for the portion becoming an active region with p type impurities reaching at least the p type lower cladding layer, n type impurities reverting the portions of the n type cladding layer to which p type impurities have diffused to n type, and the n type impurities reaching the n type cladding layer but not reaching the active layer. |
| 公开日期 | 1990-12-25 |
| 申请日期 | 1990-01-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84429]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TAKAHASHI, SHOGO. Method of producing a semiconductor laser. US4980313. 1990-12-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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