半導体レーザの製造方法
文献类型：专利
| 作者 | ▲崎▼山 肇; 田中 治夫; 虫上 雅人 |
| 发表日期 | 1994-07-20 |
| 专利号 | JP1994054826B2 |
| 著作权人 | ローム株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser with low threshold current by provid ing an N-type or an undoped layer on a first upper clad layer and by implanting ion which can be a P-type dopant into a part corresponding to this stripe groove. CONSTITUTION:An upper-part clad layer 21, an active layer 22, a first upper-part clad layer 23, an N-type or an undoped layer 23a, a light-absorbing layer 24, and an evaporation-prevention layer 25 are laminated on the surface of a semi conductor substrate 1 in sequence for forming a first growth layer 2. The evaporation-prevention layer 25 other than a part where a stripe groove 3 is formed is covered with a photo resist 6 and the evaporation-prevention layer 25 and the light-absorbing layer 24 are etched so that the light-absorbing layer is left slightly, thus forming the stripe groove 3 of desired width. Then, ion is implanted into the surface of the N-type layer 20a and a P-type dopant ion implantation part 5 is formed at a part corresponding to the stripe groove 3 of the N-type layer 23a. The semiconductor substrate 1 is heated while irradiat ing As molecular rays, thus evaporating impurities such as an oxide adhered to the surface of the substrate 1 and light-absorbing layer and forming a second growth layer 4 on the substrate |
| 公开日期 | 1994-07-20 |
| 申请日期 | 1989-01-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84430]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ローム株式会社 |
| 推荐引用方式 GB/T 7714 | ▲崎▼山 肇,田中 治夫,虫上 雅人. 半導体レーザの製造方法. JP1994054826B2. 1994-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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