Semiconductor laser
文献类型：专利
| 作者 | OTAKI KANAME |
| 发表日期 | 1990-10-12 |
| 专利号 | JP1990253691A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which realizes the reduction of ineffectual current and a high output by a method wherein the impurity concentration of a first conductivity type second lower cladding layer directly under an active region is selectively increased. CONSTITUTION:The impurity in a first conductivity type first lower cladding layer 2 is introduced into a first conductivity type second lower cladding layer 3 through the contact region between the first conductivity first lower cladding layer 2 and the first conductivity type second lower cladding layer 3 by thermal diffusion to form an impurity region 9 which is formed by increasing the impurity concentration of the first conductivity type second lower cladding layer 3 directly under an active region 8 selectively. In other words, the impurity concentration of the first conductivity type second lower cladding layer 3 is selectively increased. With this constitution, a reactive current which does not contribute to an oscillation can be reduced and, not only light output vs. current characteristics at the time of a high output operation can be improved but also power consumption can be saved by the reduction of a threshold current and the improvement of a light emission efficiency, so that the life of a laser device can be improved. |
| 公开日期 | 1990-10-12 |
| 申请日期 | 1989-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84435]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTAKI KANAME. Semiconductor laser. JP1990253691A. 1990-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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