Semiconductor laser device
文献类型：专利
| 作者 | ONO YUUICHI; NAKATSUKA SHINICHI; UOMI KAZUHISA; KAJIMURA TAKASHI |
| 发表日期 | 1985-12-10 |
| 专利号 | JP1985249380A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain the visible light semiconductor laser of high reliability and low threshold value by a method wherein the active layer of a semiconductor laser is brought into a multi-quantum well structure consisting of a GaAs well layer and a GaAs barrier layer, and the thickness of each layer is made specific. CONSTITUTION:An N type Ga1-xAlxAs clad layer 2 the first semiconductor layer, a multi-quantum well layer 3 the second semiconductor layer consisting of an undoped GaAs layer and an undoped Ga0.8Al0.2As, a P type Ga1-xAlxAs clad layer 4 the third semiconductor layer, and an N type GaAs layer 5 the fourth semiconductor layer are successively grown on an N type GaAs substrate Next, a P region 6 is formed, and an N-side electrode 7 and a P-side electrode 8 are formed; then, a semiconductor laser of about 300mum resonator length is formed by cleavage. The active layer is brought into a multi-quantum well structure consisting of a GaAs well layer and a Ga0.8Al0.2As barrier layer, and their thicknesses are each set 3nm+ or -1nm, 5nm+ or -1nm. This construction yields the titled device of high reliability which efficiently oscillates with a visible light of 790nm or less. |
| 公开日期 | 1985-12-10 |
| 申请日期 | 1984-05-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84436]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | ONO YUUICHI,NAKATSUKA SHINICHI,UOMI KAZUHISA,et al. Semiconductor laser device. JP1985249380A. 1985-12-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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